Slides
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1 Company Profile World-class leading edge with MOCVD
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2 Core Technology MOCVD（有機金屬氣相沉積法） - Metal Organic Chemical Vapor Deposition
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3 Through the organic metal chemical vapor deposition method, the semiconductor film is grown on the substrate, and the epitaxial layer is accurately controlled through the real-time monitoring of the machine to complete the production of epitaxial wafers for different products such as GaAs 、 InP and GaN. The epitaxial layer is heated by MOCVD in the cavity of the substrate, and an atomic layer is stacked layer by layer to form an epitaxial layer. MOCVD Metal Organic Chemical Vapor Deposition Production Reactor Way to Produce Production Principle Core Technology
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4 Semiconductor（by Material） Period Column II III IV V VI 2 Be 鈹 Beryllium B 硼 Boron C 碳 Carbon N 氮 Nitrogen O 氧 Oxygen 3 Mg 鎂 Magnesium Al 鋁 Aluminum Si 矽 Silicon P 磷 Phosphorus S 硫 Sulfur 4 Zn 鋅 Zinc Ga 鎵 Gallium Ge 鍺 Germanium As 砷 Arsenic Se 硒 Selenium 5 Cd 鎘 Cadmium In 銦 Indium Sn 錫 Tin Sb 銻 Antimony Te 碲 Tellurium 6 Hg 汞 Mercury Tl 鉈 Thallium Pb 鉛 Lead 二元化合物 Binary : GaAs, InP, GaP,GaN, etc. 三元化合物 Ternary : InGaAs, InGaP, AlGaAs, etc. 四元化合物 Quaternary : AlGaInP, InGaAsP, etc. 五元化合物 Pentanary : AlGaInAsN, etc. Semiconductor GaAs, InP, GaN, GaP, GaSb... Element Si ,Ge Compound III-V IV-IV II-VI SiC, SiGe ZnSe, ZnS, CdS, etc.
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5 TMAl Tri - Methyl - Aluminum ( CH3 )3Al 三 甲基 鋁 Al CH3 CH3CH3 TEAl : Tri-ethyl-Aluminum ( C2H5 )3Al TMGa : Tri-Methyl-Gallium ( CH3 )3 Ga TMIn : Tri-Methyl-Indium ( CH3 )3In DETe : Di-ethyl-Tellurium ( C2H5 )2Te DEZn : Di-ethyl-Zinc ( C2H5 )2Zn CP2Mg : Bis (cyclo-penta-dienyl ) Magnesium 環戊二烯鎂 AsH3 : Arsine PH3 : Phosphine SiH4 : Silane Si2H6 : Disiline H2Se : Hydrogen Selenide CBr4 : Carbon Tetrabromide 化學反應式： 主要原物料: MO Source + Hydride + Carrier Gas：H2 Chemical Reaction During Epitaxy